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| IIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II III II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII * Collector-Emitter Saturation Voltage -- VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc * Collector-Emitter Sustaining Voltage -- VCEO(sus) = 80 Vdc (Min.) BD241B, BD242B VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C * High Current Gain -- Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc * Compact TO-220 AB Package . . . designed for use in general purpose amplifier and switching applications. THERMAL CHARACTERISTICS MAXIMUM RATINGS Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range Total Device Dissipation @ TC = 25_C Derate above 25_C Base Current Collector Current -- Continuous Peak Emitter-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Characteristic Rating 40 Symbol TJ, Tstg VCEO VCES VEB PD IC IB Symbol RJC RJA BD241B BD242B 90 80 - 65 to + 150 40 0.32 1.0 3.0 5.0 5.0 3.125 62.5 Max BD241C BD242C 100 115 Watts W/_C (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data Preferred devices are Motorola recommended choices for future use and best overall value. Complementary Silicon Plastic Power Transistors SEMICONDUCTOR TECHNICAL DATA MOTOROLA REV 7 PD, POWER DISSIPATION (WATTS) 10 20 30 0 0 20 40 Figure 1. Power Derating TC, CASE TEMPERATURE (C) 60 80 100 120 _C/W _C/W Unit Adc Adc Adc Vdc Vdc Vdc Unit _C 140 160 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80, 100 VOLTS 40 WATTS BD241B BD241C* PNP BD242B BD242C* *Motorola Preferred Device CASE 221A-06 TO-220AB Order this document by BD241B/D NPN 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII BD241B BD241C BD242B BD242C 1 Pulse Test: Pulse Width 2 fT = |hfe| * ftest. ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS1 OFF CHARACTERISTICS Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz) Current Gain - Bandwidth Product2 (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz) Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 600 Adc) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector-Emitter Sustaining Voltage1 (IC = 30 mAdc, IB = 0) APPROX + 11 V Vin 0 TURN-ON PULSE v 300 s, Duty Cycle v 2.0%. Characteristic VCC Vin Cjd % Ceb RK RL BD241B, BD241C, BD242B, BD242C SCOPE t, TIME ( s) VEB(off) 2 APPROX + 11 V Figure 2. Switching Time Equivalent Circuit Vin t2 TURN-OFF PULSE t1 t3 DUTY CYCLE 2.0% APPROX - 9.0 V t1 7.0 ns 100 t2 500 s t3 15 ns v tt t [ - 4.0 V BD241B, BD242B BD241C, BD242C BD241B, BD242B BD241C, BD242C 0.03 0.02 0.03 0.07 0.05 0.1 0.3 0.7 0.5 1.0 2.0 Motorola Bipolar Power Transistor Device Data 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) tr @ VCC = 10 V VCE(sat) VBE(on) Symbol VCEO ICEO IEBO ICES hFE hfe fT tr @ VCC = 30 V Min. 80 100 3.0 20 25 10 td @ VBE(off) = 2.0 V Max. 200 200 1.8 1.2 1.0 0.3 IC/IB = 10 TJ = 25C Figure 3. Turn-On Time mAdc mAdc Adc MHz Unit Vdc Vdc Vdc 3.0 BD241B BD241C BD242B BD242C r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 0.05 0.02 P(pk) ZJC (t) = r(t) RJC RJC = 3.125C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) ZJC(t) DUTY CYCLE, D = t1/t2 2.0 5.0 t, TIME (ms) 10 20 50 100 200 500 1.0 k D = 0.5 0.2 Figure 4. Thermal Response VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 5.0 5.0 ms 2.0 1.0 0.5 SECOND BREAKDOWN LIMITED @ TJ 150C THERMAL LIMITATION @ TC = 25C BONDING WIRE LIMITED 1.0 ms 100 s v 0.2 0.1 5.0 CURVES APPLY BELOW RATED VCEO BD241B, BD242B BD241C, BD242C 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C, TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v 10 20 50 IC, COLLECTOR CURRENT (AMP) Figure 5. Active Region Safe Operating Area 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.03 ts tf @ VCC = 30 V IB1 = IB2 IC/IB = 10 ts = ts - 1/8 tf TJ = 25C CAPACITANCE (pF) 300 TJ = + 25C 200 t, TIME ( s) 100 Ceb 70 50 Ccb tf @ VCC = 10 V 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 3.0 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 30 40 Figure 6. Turn-Off Time Figure 7. Capacitance Motorola Bipolar Power Transistor Device Data 3 BD241B BD241C BD242B BD242C 500 300 hFE, DC CURRENT GAIN TJ = 150C 25C - 55C VCE = 2.0 V VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 TJ = 25C 1.6 100 70 50 30 1.2 IC = 0.3 A 1.0 A 3.0 A 0.8 10 7.0 5.0 0.03 0.4 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 3.0 0 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) 500 1000 Figure 8. DC Current Gain Figure 9. Collector Saturation Region V, TEMPERATURE COEFFICIENTS (mV/C) 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 TJ = 25C + 2.5 + 2.0 + 1.5 + 1.0 + 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 VB FOR VBE *VC FOR VCE(sat) *APPLIES FOR IC/IB 5.0 TJ = - 65C TO + 150C 0 0.003 0.005 0.01 0.020.03 0.05 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages Figure 11. Temperature Coefficients 103 IC, COLLECTOR CURRENT ( A) 102 101 100 10-1 REVERSE 10- 2 25C ICES 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 FORWARD VCE = 30 V TJ = 150C 100C RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 107 IC = 10 x ICES 106 105 104 103 102 VCE = 30 V IC ICES IC = 2 x ICES (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 20 40 60 80 100 120 140 160 10- 3 - 0.4 - 0.3 - 0.2 - 0.1 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 12. Collector Cut-Off Region Figure 13. Effects of Base-Emitter Resistance 4 Motorola Bipolar Power Transistor Device Data BD241B BD241C BD242B BD242C PACKAGE DIMENSIONS -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. CASE 221A-06 TO-220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 BD241B BD241C BD242B BD242C Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *BD241B/D* BD241B/D |
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